Abstract
From experiments on internal photoemission of electrons at the (100)InSb/Al2O3 interface, the top of the InSb valence band is found to be 3.05 ± 0.10 eV below the oxide conduction band and corresponds to a conduction band offset of 2.9 ± 0.1 eV. These results indicate that the top of valence band in InSb lies energetically at the same level as in GaSb and above the valence bands in InxGa1−xAs (0 ≤ x ≤ 0.53) or InP, suggesting that variation of the group III cation has no significant impact on the energy of the semiconductor valence band top and, therefore, it mostly affects the conduction band bottom edge.
Highlights
From experiments on internal photoemission of electrons at the (100)InSb/Al2O3 interface, the top of the InSb valence band is found to be 3.05 6 0.10 eV below the oxide conduction band and corresponds to a conduction band offset of 2.9 6 0.1 eV. These results indicate that the top of valence band in InSb lies energetically at the same level as in GaSb and above the valence bands in InxGa1ÀxAs (0 x 0.53) or InP, suggesting that variation of the group III cation has no significant impact on the energy of the semiconductor valence band top and, it mostly affects the conduction band bottom edge
To reduce the off-state current caused by the narrow InSb bandgap (0.17 eV at 300 K), the quantum confinement must be used to engineer the InSb channel leading to a nanowire (NW)2,3 or a quantum well (QW)4 design
The feasibility of this InSb application crucially depends on sufficiently large conduction (CB) and valence (VB) offsets to allow for quantum confinement of electrons and holes, respectively
Summary
From experiments on internal photoemission of electrons at the (100)InSb/Al2O3 interface, the top of the InSb valence band is found to be 3.05 6 0.10 eV below the oxide conduction band and corresponds to a conduction band offset of 2.9 6 0.1 eV.
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