Electron Backscatter Diffraction Analysis of Recrystallized Grains Formed in Deformation Band in Aluminum Single Crystal

Abstract

An aluminum single crystal of 〈110〉 {110} orientation was deformed in tension and annealed to obtain partial recrystallization. In a special type of band of secondary slip (SBSS), many recrystallized grains (RGs) were formed. The orientation and the morphology of RGs were examined by an electron backscatter diffraction method. Many RGs exhibited elongated morphology along the trace of primary or sub-primary slip plane. The RGs elongated along the primary slip trace exhibited crystal rotation with respect to the average SBSS crystal orientation, about axes close to the primary plane normal. For the RGs elongated along the sub-primary slip trace, the crystal rotation axes were close to the sub-primary plane normal. In the interior of the sample, about 250 \\micron beneath the original surface, only one RG was detected. This interior RG had an orientation similar to that of the majority of RGs formed at the original surface. The rotating angle was almost exactly 40° (40° 〈111〉 rotation) for the interior RG, while the rotating angles for the surface RGs distributed in relatively wide range.