Abstract
The electron avalanche domains (EAD) in high gain semi-insulating (SI) GaAs photoconductive semiconductor switches (PCSS) are analyzed. The EAD are closely related to the growing domains associated with carrier injection. The EAD formation requires high carrier density and high field impact ionization. The avalanche carrier generation in the EAD can cause and complete the localized direct transform from theN-shaped current-voltage (I-V) characteristics toS-shapedI-Vcharacteristics. Then a transition from the EAD to current filament mechanisms can occur. The EAD ideas can explain the branch and the bend of the filaments during the formation and propagation of the filaments.
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