Abstract
Electromigration (EM) reliability of Cu interconnects for the 28 nm node with Mn doping was studied by investigating the effects of line width and length on void formation kinetics, EM lifetime and statistics. Failure modes and mass transport mechanism responsible for EM degradation of CuMn interconnects were examined. Although immortality was not observed, EM lifetime of short lines was significantly improved together with a reduction in lifetime deviation. This is attributed to the effectiveness of Mn in repairing process defects, particularly for via-related void formation in V1M2 electron flow direction.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
