Abstract
A nanoelectromechanical model based on atomistic simulations including chargetransfer was investigated. Classical molecular dynamics simulations combined withcontinuum electric models were applied to a carbon-nanotube nanoelectromechanicalmemory device that was characterized by carbon-nanotube bending performance.For a suspended (5, 5) carbon-nanotube bridge with a length of 11.567 nm(LCNT) and a trenchdepth of 0.9–1.5 nm (H), molecular dynamics results showed that the threshold voltage increased linearly asH increasedand the transition time decreased exponentially at each trench depth as the applied bias increased.When H/LCNT was below 0.13, the carbon-nanotube nanoelectromechanical memories acted as nonvolatilememory devices, whereas they were volatile memory or switching devices whenH/LCNT was above 0.14.
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