Abstract
Electroluminescence (EL) properties in the ultraviolet (UV) range were studied on Gd-implanted indium tin oxide/SiO2:Gd∕Si metal-oxide-semiconductor light emitting devices. The efficient UV line at 316nm from Gd3+ centers shows a maximum power density of 2mW∕cm2 and a quantum efficiency above 5%. The Gd3+ luminescent center has an excitation cross section above 7.4×10−15cm2 with an EL decay time around 1.6ms at a Gd concentration of 3%. A decrease of the EL efficiency is observed by a cross relaxation at a high Gd concentration and by clustering of Gd atoms at an annealing temperature of 1000°C. A strong quenching of the UV EL due to electron trapping around optically active Gd3+ centers is observed during the injection of hot electrons.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
