Abstract
Visible-light electroluminescence (EL) of a-SiC:H multilayer light emission diode (LED) has been investigated at the first time. The results show that, the EL intensity of the a-SiC:H LED with a a-SiC:H multilayer active i-layer (LEDM) is several times greater than that of conventional a-SiC:H LED with a single a-SiC:H i-layer (LEDS), and the threshold current is lower, the EL peak positions of LEDM are in the vicinity of 630 nm and 730 nm, the forward EL intensity is one order of magnitude greater than that of reverse. The dependence of the EL intensity on temperature are also investigated.
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