Abstract
We demonstrate the formation of a light-emitting porous silicon (PSi) layer by photoetching in an HF/I2 solution. The use of a Xe lamp makes possible a large and homogeneous PSi layer on an n-type Si(100) wafer. An insulating layer has been formed on the PSi layer by chemical oxidation in an acidic solution. These techniques are used to fabricate electroluminescent (EL) devices of metal/insulator/semiconductor (MIS) type. It is shown that the present device is superior with respect to emission efficiency to the conventional Schottky- or metal/semiconductor-type device.
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