Abstract
Electromigration is considered a major concern of the decrease of Cu line reliability. Thus Copper-silver, a promising material for the next generation of interconnect in the aspect of electromigration resistance,has been studied. Electrodeposition in cyanide-based electrolyte was chosen as a Cu-Ag film formation method in this study. To carry out the electrodeposition, a linear sweep voltammetry was conducted to find an optimum reduction potential. Then, the Cu-Ag film was deposited with a static potential method. Film properties were investigated varying an applied potential, pH and electrolyte composition. High quality Cu-Ag film was obtained under the condition of - 1.6 V and pH 6.6. The composition of the film could be controlled by varying Ag concentration.
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