Abstract
Vertical cadmium telluride (CdTe) nanowires were grown on flexible/transparent substrates by sputtering ITO and aluminum thin films on Parylene substrates, anodizing aluminum to form porous alumina, followed by electrodeposition of CdTe nanowires from ITO seed layer. The pore size of anodized alumina was controlled by oxalic acid concentration and applied voltage. The composition of CdTe nanowires were tuned by adjusting applied deposition potential and solution composition. I-V characteristics of a single 50 nm in diameter CdTe nanowire was examined using a conductive atomic force microscope (CAFM) at room temperature which indicates that the electrical resistivity of electrodeposited CdTe nanowires are similar to thin-film counterpart.
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