Abstract
Electrochemically deposited Pd-induced crystallization of prepatterned amorphous silicon (a-Si) thin films was proposed for the first time in this study. Most of palladium clusters were found to deposit on the sidewall ofthe amorphous-silicon islands. After samples were annealed at 530°C, parallel needlelike polycrystalline silicon grains were observed on the a-Si film with a constant angle of 55° from the edge. The direction of the primary grain growth was along and the secondary growth occurred along direction.
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