Abstract

Ce/V mixed oxide thin films with molar ratio 1 were prepared by sol–gel method from CeCl 3·7H 2O and NH 4VO 3 with methanol or distilled water as a solvent and dip-coated on SnO 2/F-covered glass. The electrochemical, optical and structural properties of thin films depend on the solvent and heat treatment. The ion-storage capacities of the films annealed at 500 °C, prepared from methanol, 60 nm thick, was approximately 13 mC cm −2 and those prepared with distilled water, 40 nm thick, more than 20 mC cm −2. The ion-storage capacity of the films annealed at 400 °C was approximately 1 mC cm −2. X-ray absorption fine structure analysis showed that crystallization process of CeVO 4 occurs in temperature range between 400 and 500 °C.

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