Abstract
We fabricated an electrochemical field-effect transistor (FET) of octathio[8]circulene ( 1) thin-film, deposited on interdigitated array electrodes, and operated it with a gate dielectric layer of an ionic liquid ( N, N-diethyl- N-methyl(2-methoxyethyl) ammonium bis(trifluoromethylsulfonyl)imide) electrolyte. The FET performance, obtained by the alternating current method for the source-drain current measurements, revealed a high carrier mobility of 2.4 × 10 −2 cm 2/Vs and a very low-power operation. The threshold potential for the on-state was nearly half of the oxidation potential of 1.
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