Abstract

PurposeThe purpose of this paper is to explore a new possibility of providing high-temperature stable lead-free interconnections for low-temperature co-fired ceramics (LTCC) hotplate. For gas-sensing application, a temperature range of 200°C-400°C is usually required by the sensing film to detect different gases which imply the requirement of thermally stable interconnects. To observe the effect of parameters influencing power of the device, electro-thermal simulation of LTCC hotplate is also presented. Simulated LTCC hotplate is fabricated using the LTCC technology.Design/methodology/approachThe proposed task is to fabricate LTCC hotplate with interconnects through vertical access. Dedicated via-holes generated on the LTCC hotplate are used to provide the interconnections. These interconnections are based on adherence and bonding mechanism between LTCC and thick film. COMSOL software is used for finite element method (FEM) simulation of the LTCC hotplate structure.FindingsThermal reliability of these interconnections is tested by continuous operation of hotplate at 350°C for 175 h and cycling durability test performed at 500°C. Additionally, vibration test is also carried out for the hotplate with no damage observed in the interconnections. An optimized firing profile to reproduce these interconnections along with the experimental flowchart is presented.Research limitations/implicationsResearch activity includes design and fabrication of LTCC hotplate with metal to thick-film based interconnections through vertical access. Research work on interconnections based on adherence of LTCC and thick film is limited.Practical implicationsA new way of providing lead-free and reliable interconnections will be useful for gas sensor fabricated on LTCC substrate. The FEM results are useful for optimizing the design for developing low-power LTCC hotplate.Originality/valueAdherence and bonding mechanism between LTCC and thick film can be used to provide interconnections for LTCC devices. Methodology for providing such interconnections is discussed.

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