Abstract
The aim of the proposed paper is discussing problematics related to the thermal modelling of power electronic components. More in detail, the electro-thermal relationship is investigated for the selected power diode, while analysis shall serve for system optimization considering thermal performance with the use of highly accurate 3D simulation model. The presented approach describes the procedure of the simulation model development, whereby the main part is discussing necessities relevant for material property identification through the indirect procedure, i.e, material properties are not known from the manufacturer. Electro-thermal dependencies are defined within the proposed model, while this model enables parametric changes of the geometrical properties of the device. Added value of this procedure is the possibility of its use in exact determination of the lifetime of a semiconductor component using mathematical models taking into account operational variables (current, voltage, temperature, etc.). The proposed model is verified and validated through thermovision experimental measurements within defined operational conditions.
Highlights
Thermal management is nowadays one of the key factors targeting reliable operation of any electronic systems
The paper discussed the design procedure of the simulation model of power diode, whose properties are relevant for electro-thermal performance investigation
The definitions of the geometrical parameters given within the paper show how it is possible to prepare fully reconfigurable simulation model
Summary
Thermal management is nowadays one of the key factors targeting reliable operation of any electronic systems Considering power electronics, this issue is currently relevant as the figure of merit evaluation, because of the continual increase of performance (power density) of semiconductor devices [1]. It is proposed to secure constant operating conditions like ambient temperature, air humidity, airflow rate, etc This issue requires high demands on laboratory equipment and hardware disposal of the investigated system. For this reason, the exact and reconfigurable simulation model of power semiconductor components represents comfortable way for the pre-design stage of the whole system enabling to eliminate any undesirable behaviour. At the end of the paper, the evaluation of simulation model performance is done in the way of comparisons to experimental measurements
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