Abstract
Insulator-metal transitions (IMTs) are the subject of intense fundamental and applied research including their potential applications in electronic devices like coupled relaxation oscillators [1], neuromorphic devices [2], Phase FETs [3], and RF switches [4]. A key requirement for practical device application of IMT materials is that the IMT temperature (IWr) should be greater than 358 K (85C) which is the operating temperature of electronic chips (Fig. 1). In this work, we investigate the electrically induced IMT in epitaxially grown 0.3% tensile strained Ca 2 RuO 4 thin films wherein strain engineering increases the transition temperature (Timt) to more than 550K from a bulk value of ∼357K (ΔΤ I μT >190K). Using systematic DC and transient I-V measurements, we show that the origin of the electrically induced IMT in Ca 2 RuO 4 is current induced self-heating.
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