Abstract
In this paper we compare the interface trap distributions D it(E) of sulfur treated Al 2O 3/In 0.53Ga 0.47As interfaces, which underwent MOS capacitor and transistor fabrication processes. Lower interface trap densities were found close to the conduction band edge for both cases. The inversion channel MOSFET achieves high device performance despite the fact that its oxide-semiconductor interface quality is a notch below that of the MOS capacitor with optimized process.
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