Electrical responses of short-channel organic transistor prepared by solution-processed organic crystal wire mask

Abstract

We report a formation of a solution-grown single crystal wire mask for the fabrication of short-channel organic field-effect transistor with enhanced dynamic response time. The various channel length, ranging from submicrometer to a few micrometers, were obtained by controlling the concentration of solution and processing conditions. We fabricated p- and n-channel bottom-contact organic field-effect transistors using pentacene and PTCDI-C13, respectively, and static and dynamic electrical characteristics of the devices were investigated. The highest and average field-effect hole mobility values were found to be 0.892cm2/Vs and 0.192cm2/Vs, respectively. The load type inverter based on the short-channel transistor connected with a 2MΩ resistor showed a clear switching response when square wave input signals up to 1kHz were applied at VDD=−60V.