Abstract
Resistivity of individual molecular-assembly nanowires was characterized using the point-contact current-imaging atomic force microscope (PCI-AFM). Current images were simultaneously obtained along with topographic images, from which the mean electrical resistivity of each nanowire was deduced to be approximately 180Ωcm, which was about two orders of magnitude lower than that measured on bulk Langmuir–Blodgett films (103–105Ωcm).
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