Abstract
Electrical resistivities due to dislocations, rho d(T), in pure aluminium and the dilute alloys containing Mg, Ag and Zn solute atoms were measured, and the resistivity minimum of rho d(T) was found to be approximately 20K. The resistivity minimum was not found for highly deformed samples or samples annealed at fairly low temperatures after the deformation. The temperature dependence of rho d(T) was -log T-type in the range below the temperature at which the resistivity minimum was found. The characteristic temperature dependence is suggestive of the spin-dependent Kondo effect or the two-level system. Experimental results were analysed by the expression rho d(T)=A-B log (T2+TDelta 2), and the best-fit parameters A, B and TDelta varied with the dislocation density, the species of solute atom and the concentration.
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