Abstract
Electrical resistivity measurements in comparison with differential-scanning calorimetry (DSC) analysis were performed on La55Al25Ni10Cu10 bulk metallic glass (BMG) samples. The critical points of the temperature dependent electrical resistivity (TER) curve can be marked precisely with the help of the temperature derivative of TER curve. The electrical resistivity change in the annealing process below glass transition temperature (Tg) equals the difference in electrical resistivity change from Tg to the crystallization temperature (Tx) between the annealed and as cast samples. The relaxation behavior at 445K is analyzed using Kohlrausche Williamse Watts (KWW) equation with fitting results of Δρ eq T =8.91*10−8O•m, τ=2390s and β=0.66. Isochronal electrical resistivity measurements of different heating rates show an obvious kinetic appearance. Fragility parameter D* and VFT temperature T0 are 9.8 and 324.9K respectively using a VFT-like equation.
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