Abstract
A new type of Bi-based relaxor, Bi 2(Mg 1/3Nb 2/3) 2O 7 (BMN), has been investigated to understand nature of relaxor behavior. The BMN thin films have been successfully fabricated by a sol–gel spin coating method on Pt/Ti/SiO 2/Si(1 0 0) substrate. Dielectric properties of BMN thin films were investigated in the temperature range of 20–750 °C at frequencies of 10 2–10 7 Hz. The BMN thin film exhibits a characteristic diffused phase transition; the decreased dielectric constant and the increased dielectric constant maximum temperature with increasing frequency. The temperature dependent reciprocal dielectric constant ( 1 / ε ′ ) deviates from the Curie–Weiss law in the temperature range over the dielectric constant maximum temperature ( T m ) . The diffuseness of the phase transition of BMN thin film was estimated by calculating the difference between T m and T cw (starting temperature following the Curie–Weiss law). For BMN thin film, the Curie–Weiss temperature Θ , the Curie–Weiss constant c, the temperature T cw and the temperature difference T cw - T m measured at frequency of 10 3 Hz are 912, 1.15×10 5, 969 and 49 K, respectively. The dielectric relaxation obeys the Vögel–Fulcher relationship with the freezing temperature of 770 K.
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