Abstract
physica status solidi (a)Volume 97, Issue 1 p. K83-K86 Short Note Electrical properties of p-type layer in Si-implanted GaAs S. Shigetomi, S. Shigetomi Department of Physics, Kurume University Search for more papers by this authorT. Matsumori, T. Matsumori Department of Electronics, Faculty of Engineering, Tokai University Search for more papers by this author S. Shigetomi, S. Shigetomi Department of Physics, Kurume University Search for more papers by this authorT. Matsumori, T. Matsumori Department of Electronics, Faculty of Engineering, Tokai University Search for more papers by this author First published: 16 September 1986 https://doi.org/10.1002/pssa.2210970151 Mii-machi, Kurume 830, Japan. Shibuya-ku, Tokyo 151, Japan. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Volume97, Issue116 September 1986Pages K83-K86 RelatedInformation
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
