Abstract
The electrical resistivity and Hall effect of p- and n-type CuInSe2 single crystals are measured in the temperature range from 80 K to 500 K. p- and n-type samples are prepared by doping with excess Se and excess In, respectively. The acceptor levels at 0.020 eV and 0.028 eV above the valence band and the donor levels at 0.012 eV and 0.18 eV below the conduction band are identified. The mobility data are analysed assuming scattering by acoustic, polar optical, and nonpolar optical phonons and by ionized impurities. For some of the n-type samples, the measurements are extended to liquid helium temperature and the result is analysed by the existing theories of impurity band conduction.
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