Abstract
Pure and lanthanum doped Bi 4Ti 3O 12 thin films were deposited on Pt/Ti/SiO 2/Si substrate using a polymeric precursor solution. Annealing in static air and oxygen atmosphere was performed at 700 °C for 2 h. The obtained films were characterized by X-ray diffraction and atomic force microscopy. The dielectric constant and dissipation factor were measured in the frequency region from 1 kHz to 1 MHz. Electrical characterization of the films pointed to ferroelectricity via hysteresis loop. Films annealed in static air possess a dielectric constant higher than films annealed in oxygen atmosphere due to differences in the grain size, crystallinity and structural defects. A regularly shaped hystereses loop is observed after annealing in static air. The obtained results suggest that the annealing in oxygen atmosphere can increase the trapped charge and the relaxation phenomenon.
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