Abstract
Thin films of 0.65Pb (Mg1/3Nb2/3)O3-0.35PbTiO3(PMN-PT) of thickness 300 nm were grown on Si (001) substrates using conventional pulsed laser deposition (PLD) at substrate temperature in the range of 500°–650°C in oxygen ambient of 300 mTorr. The La0.5Sr0.5CoO3−δ (LSCO) thin films (used as bottom electrode) of RMS roughness of approximately 1.7 nm and resistivity of 2100 μΩ-cm were epitaxially grown on CeO2/YSZ-buffered Si (001) substrates. The high-resolution X-ray diffraction and transmission electron microscopy results show that the PMN-PT films grown on LSCO/CeO2/YSZ/Si substrates at 550°C exhibit the epitaxial perovskite structure. The PMN-PT films exhibited a high dielectric constant of about 1631 and a low dissipation factor of 0.06 at a frequency of 10 kHz. A good P−E (polarization−electric field) hysteresis characteristic with remanent polarization of 6.34 μC/cm2 and a coercive field of 33.5 kV/cm was obtained on the PMN-PT films.
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