Abstract
The electrical properties of BC2N thin films have been investigated in terms of the temperature dependence of the resistivity and Hall effect measurements. The BC2N thin films were prepared by chemical vapor deposition from acetonitrile and boron trichloride on polycrystalline Ni and quartz substrates. The experimental results indicated that the BC2N films were p-type semiconductors on both substrates, with acceptor levels between 7.5 and 23 meV relative to the valence band. The hole mobility on Ni substrates was one order of magnitude higher than that on the quartz substrates, suggesting that the thin film quality is better on Ni substrates than on quartz substrates.
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