Abstract
High-quality, ultrathin chemical vapor deposition (CVD) hafnium oxynitride (HfOxNy) gate dielectric with poly-silicon (Si) gate electrode has been investigated for the first time. This CVD HfOxNy gate dielectric film remains amorphous after 950 /spl deg/C N/sub 2/ annealing. Compared with HfO/sub 2/ films with poly-Si gate electrode and similar equivalent oxide thickness (EOT), CVD HfOxNy shows significantly reduction in leakage-current density and boron penetration and superior thermal and electrical stability.
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