Abstract
Ba1−xSbxTiO3 (x = 0.001 and 0.0015) and 0.25 wt% Si3N4-added Ba0.999Sb0.001TiO3 was studied in terms of the correlation between its electrical properties and microstructure. The electrical properties were determined by measuring the room temperature resistivity of specimens sintered at 1240 - 1380 °C in air for 1 h, while the microstructure was investigated using an optical microscope and a scanning electron microscope to evaluate the correlation between room temperature resistivity and grain size due to changes in the sintering temperature. In summary, 0.25 wt% Si3N4-added Ba0.999Sb0.001TiO3 underwent semiconductorization at lower sintering temperatures than Ba0.999Sb0.001TiO3, which was due to the discontinuous grain growth and Ba vacancy concentration in grain.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
