Electrical, Optical, and Structural Properties of SnO2: F Films as a Function of Fluoride Precursor Concentration and Temperature

Abstract

Abstract Atmospheric pressure chemical vapor deposition (APCVD) employing the precursor system of tin tetrachloride, ethyl formate, and 2,2,2‐trifluoroethyl trifluoroacetate vapors that were transported to hot glass substrates to deposit fluorine doped tin dioxide thin films. The system is optimized with respect to the substrate deposition temperature and to the amount of fluoride added to the precursor stream and the resultant structural, electrical and optical properties compared. Increasing the substrate temperature from 360 °C to 610 °C resulted in an approximately linear increase in thickness of the tin dioxide films. However, the resistivity decreased from 1.8 × 10–2 Ω·cm at 360 °C to a minimum of 5.9 × 10–4 Ω·cm at 560 °C and increased to 9.4 × 10–4 Ω·cm at 610 °C. While maintaining a substrate temperature of 560 °C different amounts of fluorine precursor was introduced into the carrier stream, from 0 mL·h–1 to 5 mL·h–1, resulting in a decrease in resistivity (ρ) from 5.3 × 10–2 Ω·cm at 0 mL·h–1 to a minimum of 5.9 × 10–4 Ω·cm at 2 mL·h–1 and then increased to 1.0 × 10–3 Ω·cm at 5 mL·h–1. As the amount of fluoride is increased a concommittent increase in carrier concentration results until the point of overdoping the film produces an increase in scattering sites that increases resistivity. Best films were deposited at 560 °C and when the fluoride precursor flow rate was 2 mL·h–1.