Abstract
We report on the effect of Au diffusion on the electrical properties of ZnTe films deposited on Au coated substrates using rf magnetron sputtering. A drop over about 8 decades in the room temperature conductivity is observed for a change in substrate temperature from 60 °C to 325 °C. The results are interpreted in terms of a point-defect model that takes into account the interaction between the in-diffused Au and the intrinsic defects. The analysis of the results on the basis of this model yields a diffusion barrier of 0.40 eV for gold in ZnTe.
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