Abstract
The solubility limit of metals in cuprous oxide is very low and it is therefore difficult to form solid solutions of metal oxides with cuprous oxide. In an on going research looking for such solid solutions and their properties we have prepared Co doped Cu2O. We report here on measurements of the electrical conductivity of Co doped Cu2O as a function of the oxygen partial pressure. It is found that Co doped material is an n-type semiconductor in the low oxygen partial pressure regime and p-type at higher oxygen pressures (while undoped Cu2O is a p-type material throughout the whole existence regime). A point defect model is discussed. The ionic transference number is also measured and is found to be less than 2⋅10−4.
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