Abstract
Complex research of silicon microcrystals with specific resistance from ρ300K = 0.025 Ohm × cm to ρ300K =0.007 Ohm × cm doped with boron transport impurity to concentrations corresponding to the transition of metaldielectric and modified transition metal nickel at low temperatures to the temperature of liquefied heliumT = 4.2 K in magnetic fields up to 14 Tl. The features of electrophysical characteristics of samples at lowtemperatures in strong magnetic fields up to 14 Tl are determined due to the influence of a magnetic impurity insemiconductor-diluted magnetism and the use of such crystals in sensors of physical quantities (temperature,magnetic field, deformation) is proposed.
Highlights
The study of low-temperature characteristics of doped semiconductor microcrystals with impurity concentration in the vicinity of the metal-dielectric transition (MIT) has been sufficiently studied today [1,2], since they can provide information on the kinetic effects of these materials that can be used to create highsensitivity physical sensors capable of low temperatures and other basic elements of solid-state electronics
The introduction of a magnetic impurity into a crystal that is capable of polarizing charge carriers around itself makes it possible to create conditions in which it is necessary to take into account the polarization component for prediction of the magnetoresistance of crystals caused by the nature of the jump conductivity at low temperatures
The purpose of the paper is to study the effect of a magnetic impurity on the movement of charge carriers in microcrystals doped with boron transport impurities to concentrations corresponding to the MIT at low temperatures to a temperature of liquefied helium T = 4.2K in magnetic fields up to 14 T for the development of sensors physical quantities, able to work under harsh conditions
Summary
The study of low-temperature characteristics of doped semiconductor microcrystals with impurity concentration in the vicinity of the metal-dielectric transition (MIT) has been sufficiently studied today [1,2], since they can provide information on the kinetic effects of these materials that can be used to create highsensitivity physical sensors capable of low temperatures and other basic elements of solid-state electronics. In the filamentous crystals, there were interesting magnetic properties associated with the possible formation of superparamagnetic clusters in crystals of submicron diameter [14] In this regard, the study of magnetoresistance of silicon microcrystals, modified by an admixture of transition metals from a practical point of view is interesting primarily because the magnetic response of this material determines the possibility of microcrystals in sensors of physical quantities under the influence of an external magnetic field [15].
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