Abstract
We demonstrate a fairly high sheet conductance (∼1 μS) from 300 K to 10 K on the surface of ferroelectric PbTiO3 thin films in an electric double layer transistor configuration. Applying a positive gate voltage, n-type operation takes place with a high on-off ratio exceeding 105 and a high sheet electron density of 4 × 1013 cm−2. Temperature dependence of the sheet resistance changes from thermal activation-type at low gate voltage (∼3 V) to disordered two-dimensional conduction with a weak temperature dependence at high gate voltage (∼5 V). This behavior is quite different from those in BaTiO3 cases, where strong localization takes place below 100 K in electrostatically or chemically doped BaTiO3 thin films. The absence of instability to a lower symmetry crystal structure may play a role in the case of tetragonal PbTiO3.
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