Abstract
Transfer length method (TLM) structures were fabricated to characterize the Ni/Au/AuGe–n +–GaAs contacts for quantum dot infrared photodetector (QDIP). Low specific contact resistance of the order of 10 −5 Ω cm 2 indicates formation of a good Ohmic contact. The current–voltage measurements show that current transport is linear with no significant interfacial modification due to alloying of the contact metal. Low contact resistance makes this scheme suitable for the fabrication of heterostructure QDIP devices.
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