Abstract
In this work, cross-sectional scanning capacitance microscopy (SCM) is used to investigate 5, 10, and 20 nm InGaAs/InP (lattice matched) quantum wells grown by metal-organic vapour phase epitaxy and sandwiched between Si-doped InP barriers. It is demonstrated that SCM is capable of detecting the electrons accumulated in the quantum wells and that the SCM signal shows a systematic trend for the wells of different width. It is also shown that at appropriate tip-sample DC biases depletion regions in the barriers adjacent to the wells are clearly resolved.
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