Abstract
This paper reviews some of the electrical characterization methods used to determine electrically active defect densities produced by ionizing radiation exposure of the Si-SiO2 system. The electrical characterization methods discussed are the charge-capacitance method, the conductance method, and the charge pumping method. Interface trap and fixed oxide charge densities are separated by use of the interface trap charge neutral point. The controversy in the literature about the location in silicon bandgap energy of this charge neutral point is addressed, and it is shown that it is located at midgap to a good approximation. The comparative advantages and limitations of the three measurement methods for radiation studies are discussed.
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