Abstract
We successfully fabricated high quality cubic AIN/GaN heterostructures on 3C-SiC substrates by radio-frequency plasma assisted molecular beam epitaxy, and characterized their electrical properties for the first time. The Hall mobility value of 1290 cm 2 /Vs was obtained at room temperature, and it drastically increased to 7330 cm 2 /Vs at 100 K. These values as well as other electrical characterization results suggest the generation of a two-dimensional electron gas.
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