Abstract
This research proposes the use of a composition modulated (ZrO<sub>2</sub>)<sub>x</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1-x</sub> film as a charge trapping layer for charge trap flash memory; this is possible when the Zr (Al) atomic percent is controlled to form a variable bandgap as identified by the valence band offsets and electron energy loss spectrum measurements. Compared to memory devices with uniform compositional (ZrO<sub>2</sub>)<sub>0.1</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>0.9</sub> or a (ZrO<sub>2</sub>)<sub>0.92</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>0.08</sub> trapping layer, the memory device using the composition modulated (ZrO<sub>2</sub>)<sub>x</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1-x</sub> as the charge trapping layer exhibits a larger memory window (6.0 V) at the gate sweeping voltage of ±8 V, improved data retention, and significantly faster program/erase speed. Improvements of the memory characteristics are attributed to the special energy band alignments resulting from non-uniform distribution of elemental composition. These results indicate that the composition modulated (ZrO<sub>2</sub>)<sub>x</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1-x</sub> film is a promising candidate for future nonvolatile memory device applications.
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