Abstract
A p-type transparent semiconductor, CuFeO2 was synthesized by sol gel method to fabricate metal/transparent conducting oxide–semiconductor (MTCOS) Schottky photodiode. The optical and electrical properties of the CuFeO2 film and Al/p-CuFeO2/p-Si/Al diode were studied. The optical band gap of the CuFeO2 film was calculated using optical data and was found to be 2.82eV. The diode exhibits a photoconducting behavior with a high photosensitivity value of 1.31×103 under 100mW/cm2. The ideality factor and barrier height of the diode were obtained to be 1.67±0.2 and 0.55±0.01eV, respectively. The interface states have been used to explain the results obtained in this study. It is evaluated that MTCOS photodiode can be used for optoelectronics applications.
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