Abstract
n-Si/n-Cd1 - x ZnxS heterojunctions are produced by electrodepositing Cd1 - x ZnxS (0 ≤ x ≤ 0.6) films on silicon substrates, and their electrical and photoelectric properties are studied. The results demonstrate that the spectral response of the heterojunctions depends strongly on the film composition and heat-treatment conditions. The highest photosensitivity is achieved at x = 0.6 by heat treatment at 350°C for 7 min: V OC = 0.5 V and I SC = 3.8 mA/cm2 under illumination of 1500 lx at 300 K.
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