Abstract
Ga2O3/ITO co-sputtering and alternating multilayer films were deposited on the Corning glass substrates by radio frequency magnetron technique at room temperature. We investigated the effects of the thickness and period of Ga2O3 interlayer on the microstructure. We also elucidated the electrical and the optical properties of Ga2O3/indium tin oxide (ITO) multilayer films and co-sputtered the Ga2O3/ITO mixed films (co-IGTO). One-period Ga2O3/ITO films, which exhibited the lowest sheet resistance of 58.6 Ω/sq and the highest transmittance of 80.94% at a wavelength of 380 nm, were deposited on the Corning glass. The sheet resistance of co-sputtered Ga2O3/ITO film was rapidly increased to 189.2 Ω/sq., while the Hall mobility of the same film was rapidly decreased to 12.53 cm2/(V s). Although the carrier concentration of the multilayer films was lower than that of the ITO single layer, the figure of merit of the Ga2O3/ITO one-period alternating multilayer films was higher than those of single ITO and co-IGTO films.
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