Abstract
The electrical properties of p-type GaP:Cr:Zn and n-type GaP:Cr:S samples have been studied using Deep Level Transient Spectroscopy (DLTS). In GaP:Cr:Zn a deep hole emitting level is detected with a thermal activation energy of Ev + 0.48 eV and attributed to the Cr3+/4+ donor level of substitutional CrGa. In GaP:Cr:S a deep electron emitting level is detected at Ec — 0.30 eV and attributed to the Cr+/2+ double acceptor level of CrGa. The emission rates of both levels are found to be electric field dependent which can be fitted by a Poole-Frenkel model. Deep Level Optical Spectroscopy (DLOS) measurements were performed on both levels in the filled as well as in their emptied state. The Frank-Condon shifts were estimated from these measurements. The spectral shape of these DLOS spectra is discussed as due to photoionization transitions.
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