Abstract
Vanadium deep acceptor level in bulk 6H–SiC and 4H–SiC has been studied by deep level transient spectroscopy (DLTS), optical absorption (OA), photoluminescence (PL) and deep level optical spectroscopy (DLOS). DLTS reveals two levels related to vanadium acceptor level (V 3+/V 4+) for 6H–SiC at E c −0.68 eV (cubic sites) and E c −0.74 eV (hexagonal site) and for 4H–SiC at E c −0.82 eV. The good correlation obtained between DLOS and OA spectra allows us to identify OA lines and DLOS resonance band as V 3+ internal transition between the 3A 2 ground state towards excited states. The V 3+ ion configuration in 4H–SiC is given.
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