Abstract
Forward current–voltage characteristics of carrier transport at PtxSi1−x/n-GaAs interfaces have been measured in the as-deposited state and after annealing at 500 °C for 4 h. The single phase alloy Pt0.5Si0.5 shows Schottky diode characteristics with the barrier height (φb) 0.70 eV and the ideality factor (η) 1.17. Rutherford backscattering of He4 ions and Auger depth profiles for Pt, Si, Ga, and As reveal that the Pt0.5Si0.5/n-GaAs interface remains metallurgically inert even after the heat treatment. The observed metallurgical nonreactivity is reflected in the diode characteristics of the annealed samples which show negligible changes in φb and η. The silicon rich PtxSi1−x (x<0.5) alloy compositions show near-Ohmic transport in the as-deposited and annealed states. These films are also metallurgically inert on annealing.
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