Abstract
Cd 1− x Zn x Te ( x = 0.04–0.1) single crystals with a diameter up to 100 mm and maximum height of 35 mm were prepared in a vertical arrangement by gradual cooling of the melt. The crystals grew in most cases in 〈 1 1 1 〉 orientation and they are twin-free. The average density of dislocation pits is 5 × 10 4 cm −2. The FWHM values ranging from 25 to 8 arcsec were obtained on the (1 1 1)A face even near the edge of the ingot. Optical transmittance reaches 63% at 10 μm in most cases. The typical single crystals are p-type with a carrier concentration in the range of 10 14–10 16 cm −3 and mobility of 50–100 cm 2/V s at 300 K. An important acceptor level influencing carrier concentration was found to be 140 meV above the valence band. Diffusion length of both minority electrons and holes was determined to be typically 3–10 μm. In the luminescence spectra, free and bound exciton recombination bands were resolved together with donor- and acceptor- type defect features.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
