Abstract
Electrical transport measurements have been made on p-type Hg1−xCdxTe with carrier concentrations ranging from 4×1015 to 1×1017 cm−3 and with x in the range 0.26–0.6. The acceptor ionization energy was determined to be about 14 meV by measurement of carrier freeze out in Hg0.6Cd0.4Te. Far-infrared photoconductivity and transmittance measurements in Hg0.6Cd0.4Te were used to verify this ionization energy of the acceptor. Calculations of both the ionized-impurity-scattering-limited mobility and the Hall coefficient as functions of temperature indicate that the p-type Hg1−xCdxTe crystals are compensated.
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