Abstract
The creation of atomically-ordered Si{111}7 × 7 facet structures on a Si(110) substrate is realized for the first time. Au was deposited on atomically-flat {111} facet surfaces. The resistance of Au wires crossing over three-dimensional (3D) facet edges with an angular shape is intrinsically sensitive to the edge alignments in electric path: the resistance in crossing the facet edges was 3–10 times larger than that along the facet edges. We suggest the enlargement of the resistance originated from conduction electron scattering along the angular path. This work pioneers the fundamental understanding of electron transport in 3D angular metal-interconnects.
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