Abstract
The electrical properties of Ti-Si-N films deposited in a triode sputtering system with a hot cathode are presented in this paper. The process conditions P N 2 = 1.6 × 10 -4 Torr, P N 2+Ar = 5 × 10 -4 Torr, and U T = -500 V were selected so as to obtain a mixture of Si 3N 4-TiN as a result of reactive sputtering of a two-component Ti-Si target. Films with a TiN composition varying within 55%–95% had a resistivity of about 400 × 10 -8 Ω m and a temperature coefficient of resistance TCR = -20 ppm K -1, while resistance variations Δ R/ r during aging at a temperature T a = 523 K and t a = 1000 h did not exceed 1%.
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