Abstract
The spatially resolved energy transfer process in a quantum dot system subjected to electric fields has been measured by a photoluminescence (PL) confocal technique. Strong dependence of the PL spatial width upon the applied electric field of the junction was observed at low temperatures. The carrier system dynamics have shown a high PL background, due to the effect of accumulation of photons trapped in the QD layer structures, also showing distinct emission energies beyond the laser excitation region even at relatively high electric fields. The size of the PL emission region is linearly proportional to the excitation intensity. The spatially resolved measurements demonstrate both the mechanisms of photon recycling and the amplified spontaneous emission.
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